Facilities

Materials processing:
  • UHV organic molecular beam deposition/epitaxy (OMBD/OMBE) with transfer to/from N2 glove box
  • Chemical vapor deposition (CVD)
  • Rapid thermal processing furnace
  • Thermal evaporation of metal contacts (in N2 glove box)
  • Solution casting in controlled environments, including spin-coating, drop-casting and doctor-blading (in air and in N2 glove box)
  • UV/ozone cleaner
  • Vacuum plasma reactor

Ex situ characterization:
  • Variable angle spectroscopic ellipsometry (VASE)

  • UV-Vis-NIR spectrophotometry (R & T)

  • X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS)

  • Variable temperature UHV STM/STS with Q-plus nc-AFM
  • Polarized optical microscope (POM)
  • Low energy electron diffraction (LEED)
  • Contact angle goniometer

Device testing:
  • Probe station and semiconductor parameter analyzer (in N2 glove box)

  • Solar simulator (in N2 glove box)
  • EQE/IPCE (in N2 glove box)


In situ characterization during solution or vacuum processing:
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OmicronPhoto (sketch).jpgOmicronPhoto (mod).jpg 

Surface science (spectroscopy, microscopy, scattering) and organic MBD capabilities  
fully integrated with N2 glove boxes dedicated to solution processing, fabrication and testing of 
organic electronic, nanoelectronic and photovoltaics.




We use a w​ide array of additional characterization techniques in KAUST's shared facilities, including AFM, SEM, TEM/STEM/EFTEM, Raman, FTIR, NMR. In addition, we also use KAUST's premier scientific visualization facilities as a tool for understanding complex molecular crystalline structures.

We also have several active proposals at synchrotron X-ray radiation sources in the US, including at ALS (LBNL, Berkeley), SSRL (SLAC, Stanford), and CHESS (Cornell), where the Amassian group performs a variety of static and time-resolved scattering, spectroscopy and microscopy measurements on organic semiconductors and colloidal quantum dots used in electronics and in solar energy and low-cost solution processing techniques used to fabricate devices thereof.