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CuSCN, a new wide bandgap, highly transparent p-type inorganic semiconductor is featured in two papers published in Advanced Materials and Chemical Communications

2/2/2013
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature with demonstrated low-voltage and with hole mobilities in the range of 0.01–0.1 cm2 V−1 s−1. The articles in Advanced Materials demonstrates a NOT logic circuit, while the article in Chemical Communications delves into the exciting optical, chemical, structural and charge transport properties of CuSCN. This is the result of a collaboration between the Amassian and Anthopoulos groups at KAUST and at Imperial College London, and involved three members of the Organic Electronics and Photovoltaics group: Guy Olivier Ngongang Ndjawa, Dr Kui Zhao, and Dr Kang Wei Chou.
 
 

 
[Pattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., O'Regan, B. C., Amassian, A. and Anthopoulos, T. D. (2012), Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature. Adv. Mater.. doi: 10.1002/adma.201202758]

[Pattanasattayavong, P., Guy Olivier Ngongang Ndjawa, Kui Zhao, Kang Wei Chou, Nir Yaacobi-Gross, Brian C.O'Regan,  Aram Amassian and Thomas D. Anthopoulos. Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature. Chemical Communications (2013).at <http://dx.doi.org/10.1039/C2CC37065D]

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