CuSCN, a new wide bandgap, highly transparent p-type inorganic semiconductor is featured in two papers published in Advanced Materials and Chemical Communications

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature with demonstrated low-voltage and with hole mobilities in the range of 0.01–0.1 cm2 V−1 s−1. The articles in Advanced Materials demonstrates a NOT logic circuit, while the article in Chemical Communications delves into the exciting optical, chemical, structural and charge transport properties of CuSCN. This is the result of a collaboration between the Amassian and Anthopoulos groups at KAUST and at Imperial College London, and involved three members of the Organic Electronics and Photovoltaics group: Guy Olivier Ngongang Ndjawa, Dr Kui Zhao, and Dr Kang Wei Chou.

[Pattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., O'Regan, B. C., Amassian, A. and Anthopoulos, T. D. (2012), Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature. Adv. Mater.. doi: 10.1002/adma.201202758]

[Pattanasattayavong, P., Guy Olivier Ngongang Ndjawa, Kui Zhao, Kang Wei Chou, Nir Yaacobi-Gross, Brian C.O'Regan,  Aram Amassian and Thomas D. Anthopoulos. Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature. Chemical Communications (2013).at <]